TN0104N8-G MOSFET N-CH 40V 0.63A TO243AA

TN0104N8-G MOSFET N-CH 40V 0.63A TO243AA

TN0104N8-G N-Channel 40V 630mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89)

Product Details

TN0104N8-G MOSFET N-CH 40V 0.63A TO243AA

ManufacturerMicrochip Technology
Packaging ?Tape & Reel (TR) ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C630mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Vgs(th) (Max) @ Id1.6V @ 500µA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds70pF @ 20V
FET Feature-
Power Dissipation (Max)1.6W (Tc)
Rds On (Max) @ Id, Vgs2 Ohm @ 1A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-243AA (SOT-89)
Package / CaseTO-243AA







 China has realized the independent development of some mobile phone chip products and achieved breakthroughs in technology. The support level for multi-mode multi-frequency and carrier polymerization has reached the international advanced level. 

In terms of the localization of domestic mobile phone chips, in the 3G era, the rapid development of td-made mobile phones made 3G mobile phones in China account for up to 25% of the total production. In the 4G era, the proportion of mobile phones using domestic chips accounted for more than 20 percent in the first half of 2017, as the number of brands using independent chips, such as huawei, increased.

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