TN0104N8-G MOSFET N-CH 40V 0.63A TO243AA
|Packaging||Tape & Reel (TR)|
|Technology||MOSFET (Metal Oxide)|
|Drain to Source Voltage (Vdss)||40V|
|Current - Continuous Drain (Id) @ 25°C||630mA (Tj)|
|Drive Voltage (Max Rds On, Min Rds On)||3V, 10V|
|Vgs(th) (Max) @ Id||1.6V @ 500µA|
|Input Capacitance (Ciss) (Max) @ Vds||70pF @ 20V|
|Power Dissipation (Max)||1.6W (Tc)|
|Rds On (Max) @ Id, Vgs||2 Ohm @ 1A, 10V|
|Operating Temperature||-55°C ~ 150°C (TJ)|
|Mounting Type||Surface Mount|
|Supplier Device Package||TO-243AA (SOT-89)|
|Package / Case||TO-243AA|
China has realized the independent development of some mobile phone chip products and achieved breakthroughs in technology. The support level for multi-mode multi-frequency and carrier polymerization has reached the international advanced level.
In terms of the localization of domestic mobile phone chips, in the 3G era, the rapid development of td-made mobile phones made 3G mobile phones in China account for up to 25% of the total production. In the 4G era, the proportion of mobile phones using domestic chips accounted for more than 20 percent in the first half of 2017, as the number of brands using independent chips, such as huawei, increased.