STD6N95K5 MOSFET N-CH 950V 9A DPAK
| Manufacturer | STMicroelectronics | |
|---|---|---|
| Series | SuperMESH5™ | |
Packaging  | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 950V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Vgs(th) (Max) @ Id | 5V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 90W (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.25 Ohm @ 3A, 10V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D-Pak | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Email: jody@theicchip.com
In the process of sustainable development, and signs in the core industrial chain partners should seize their own advantages, in such aspects as technology innovation, model innovation continuously, and continuous efforts in construction and improve the industrial chain, value chain each link of collaborative research, attaches great importance to the application, attach importance to the user, from the user's actual demand for the direction of development.
