SPP11N60C3XKSA1 MOSFET N-CH 650V 11A TO-220AB

SPP11N60C3XKSA1 MOSFET N-CH 650V 11A TO-220AB

SPP11N60C3XKSA1 N-Channel 650V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1

Product Details

SPP11N60C3XKSA1 MOSFET N-CH 650V 11A TO-220AB


ManufacturerInfineon Technologies
SeriesCoolMOS™
Packaging ?Tube ?
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Rds On (Max) @ Id, Vgs380 mOhm @ 7A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3


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