SPB07N60C3ATMA1 MOSFET N-CH 650V 7.3A D2PAK

SPB07N60C3ATMA1 MOSFET N-CH 650V 7.3A D2PAK

SPB07N60C3ATMA1 N-Channel 650V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO263-3-2

Product Details

 

SPB07N60C3ATMA1 MOSFET N-CH 650V 7.3A D2PAK

ManufacturerInfineon Technologies
SeriesCoolMOS™
Packaging ?Tape & Reel (TR) ?
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Rds On (Max) @ Id, Vgs600 mOhm @ 4.6A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

 

Email: kathleen@buyicchip.com

 

 

 Of industry and information technology, electronic information DiaoShi Zhou Zixue Beijing director, China semiconductor industry association director, vice executive director of the Lu Shan and representatives of 325 member units attend or delegate attended the meeting.


Formed the 7th council meeting election, the election smic IC manufacturing co., LTD., chairman of Zhou Zixue served as the seventh China semiconductor industry association director, China's electronic information industry development of the institute for Lu Shan as (legal representative) and secretary-general, deputy executive director of the national integrated circuit industry investment fund co., LTD., general manager of Ding Wenwu 19 enterprises and institutions such as representative of China semiconductor industry association vice President of the 7th.

 


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