SIR662DP-T1-GE3

SIR662DP-T1-GE3

SIR662DP-T1-GE3 N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Product Details

 

SIR662DP-T1-GE3 MOSFET N-CH 60V 60A PPAK SO-8

ManufacturerVishay Siliconix
SeriesTrenchFET®
Packaging ?Tape & Reel (TR) ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4365pF @ 30V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs2.7 mOhm @ 20A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

 

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