SIHG20N50C-E3

SIHG20N50C-E3

SIHG20N50C-E3 N-Channel 500V 20A (Tc) 250W (Tc) Through Hole TO-247AC

Product Details


SIHG20N50C-E3 MOSFET N-CH 500V 20A TO247


ManufacturerVishay Siliconix
Series-
Packaging ?Bulk ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2942pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Rds On (Max) @ Id, Vgs270 mOhm @ 10A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

 

Email: jody@theicchip.com

 The President of the general assembly, nie, expressed his sincere greetings and warm welcome to the experts and scholars on behalf of the organizing committee.

Cai-dong xiong introduced the developing history and present status at the university of electronic science and technology, as well as in discipline construction, scientific research, foreign academic exchange and so on, hope that through ICCEM 2018 high level platform, to further promote the academic development of computational electromagnetics and related areas, strengthen the Chinese and foreign academic exchanges and cooperation.

The American academy of engineering and the current antenna, transmission, Weng, purdue university, President of the association of Cho Chew professor thanks to domestic and foreign experts and scholars gathered to share research results in the field of computational electromagnetics, rich academic communication antenna transmission association.

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