SIHG20N50C-E3 MOSFET N-CH 500V 20A TO247
|Technology||MOSFET (Metal Oxide)|
|Drain to Source Voltage (Vdss)||500V|
|Current - Continuous Drain (Id) @ 25°C||20A (Tc)|
|Drive Voltage (Max Rds On, Min Rds On)||10V|
|Vgs(th) (Max) @ Id||5V @ 250µA|
|Gate Charge (Qg) (Max) @ Vgs||76nC @ 10V|
|Input Capacitance (Ciss) (Max) @ Vds||2942pF @ 25V|
|Power Dissipation (Max)||250W (Tc)|
|Rds On (Max) @ Id, Vgs||270 mOhm @ 10A, 10V|
|Operating Temperature||-55°C ~ 150°C (TJ)|
|Mounting Type||Through Hole|
|Supplier Device Package||TO-247AC|
|Package / Case||TO-247-3|
The President of the general assembly, nie, expressed his sincere greetings and warm welcome to the experts and scholars on behalf of the organizing committee.
Cai-dong xiong introduced the developing history and present status at the university of electronic science and technology, as well as in discipline construction, scientific research, foreign academic exchange and so on, hope that through ICCEM 2018 high level platform, to further promote the academic development of computational electromagnetics and related areas, strengthen the Chinese and foreign academic exchanges and cooperation.
The American academy of engineering and the current antenna, transmission, Weng, purdue university, President of the association of Cho Chew professor thanks to domestic and foreign experts and scholars gathered to share research results in the field of computational electromagnetics, rich academic communication antenna transmission association.