SI7461DP-T1-GE3

SI7461DP-T1-GE3

SI7461DP-T1-GE3 MOSFET P-CH 60V 8.6A PPAK SO-8 · Payment & Shipping Payment 1. Western Union 2. PayPal 3. Escrow 4. Contact us for more service Shipping Standard Service: UPS/DHL/TNT/EMS/FedEx/More others Please feel free to contact us for more information. FAQ 1) Is it possible to supply...

Product Details

SI7461DP-T1-GE3 MOSFET P-CH 60V 8.6A PPAK SO-8

ManufacturerVishay Siliconix
SeriesTrenchFET®
Packaging ?Tape & Reel (TR) ?
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
Vgs (Max)±20V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Rds On (Max) @ Id, Vgs14.5 mOhm @ 14.4A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

 

  

Company Information

IC CHIP CO., LIMITED
http://www.myicchip.com/
TEL: +86-755-88603571
MAIL: inquiry@theicchip.com


China's semiconductor industry is at a delicate juncture. Domestically, the external environment such as policies and capital belongs to the best period in history, in the thirteenth session of a conference of the National People's Congress, prime minister li keqiang made the government work report contains electronic industry reform and development direction in the future, the integrated circuit are included in the government work report again, and at the top of the key development of the real economy niche business first.

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