SI4472DY-T1-E3 MOSFET N-CH 150V 7.7A 8-SOIC

SI4472DY-T1-E3 MOSFET N-CH 150V 7.7A 8-SOIC

SI4472DY-T1-E3 N-Channel 150V 7.7A (Tc) 3.1W (Ta), 5.9W (Tc) Surface Mount 8-SO

Product Details

SI4472DY-T1-E3 MOSFET N-CH 150V 7.7A 8-SOIC

ManufacturerVishay Siliconix
Packaging ?Tape & Reel (TR) ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1735pF @ 50V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 5.9W (Tc)
Rds On (Max) @ Id, Vgs45 mOhm @ 5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)





 Fontainebleau, one of France's largest palaces, is located in Fontainebleau, on the left bank of the Seine, about 60 kilometers from Paris. In 1137, Louis vi ordered the castle to be built here, and later, through the expansion, decoration and restoration of the monarch, it became a magnificent imperial palace. In Fontainebleau, there is a Chinese pavilion, which was built by emperor eugenie of napoleon iii. The reason for the construction is to store the relics from the yuanmingyuan. It is said that there are over 30,000 pieces of Chinese paintings, porcelain, jade carvings, censers, gems and silverware.     

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