SI2343DS-T1-E3

SI2343DS-T1-E3

P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Product Details

SI2343DS-T1-E3  MOSFET P-CH 30V 3.1A SOT23-3


ManufacturerVishay Siliconix
SeriesTrenchFET®
Packaging ?Digi-Reel® ?
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 15V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Rds On (Max) @ Id, Vgs53 mOhm @ 4A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3


Email: kathleen@buyicchip.com




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