P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Product Details
SI2343DS-T1-E3 MOSFET P-CH 30V 3.1A SOT23-3
Manufacturer
Vishay Siliconix
Series
TrenchFET®
Packaging
Digi-Reel®
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
540pF @ 15V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Rds On (Max) @ Id, Vgs
53 mOhm @ 4A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Email: kathleen@buyicchip.com
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