SI2333CDS-T1-GE3 MOSFET P-CH 12V 7.1A SOT-23

SI2333CDS-T1-GE3 MOSFET P-CH 12V 7.1A SOT-23

SI2333CDS-T1-GE3 P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Product Details


SI2333CDS-T1-GE3 MOSFET P-CH 12V 7.1A SOT-23


ManufacturerVishay Siliconix
SeriesTrenchFET®
Packaging ?Tape & Reel (TR) ?
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1225pF @ 6V
FET Feature-
Power Dissipation (Max)1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs35 mOhm @ 5.1A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3


Email: Yilia@buyicchip.com

 


 




 

 

 

 

  

Qing xianfeng ten years (1860), the British and French allied forces in tianjin landed in the city, the xianfeng emperor fled to chengde summer resort, leaving tens of thousands of soldiers inside the walls. The British and French troops then occupied the Summer Palace, burned and looted, and finally burned the "yuanmingyuan", which was known as the park of wan yuan, to cover up the heinous crimes. The fire lasted three days and three nights, making it a rare atrocity in the history of world civilization and a shameful history of the Chinese nation.

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