IXFX180N15P N-Channel 150V 180A (Tc) 830W (Tc) Through Hole PLUS247™-3

Product Details

IXFX180N15P MOSFET N-CH 150V 180A PLUS 247

SeriesHiPerFET™, PolarP2™
Packaging ?Tube ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7000pF @ 25V
FET Feature-
Power Dissipation (Max)830W (Tc)
Rds On (Max) @ Id, Vgs11 mOhm @ 90A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

In the spring of 2018, Aspencore's "electronic engineering album", "electronic technology design" and "international electronic commerce" jointly hosted the 2018 China IC leaders summit in Shanghai. 


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