IRL2910S

IRL2910S

IRL2910SPBF N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK

Product Details


IRL2910S  MOSFET N-CH 100V 55A D2PAK



ManufacturerInfineon Technologies
SeriesHEXFET®
Packaging ?Tube ?
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds3700pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs26 mOhm @ 29A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In the spring of 2018, Aspencore's "electronic engineering album", "electronic technology design" and "international electronic commerce" jointly hosted the 2018 China IC leaders summit in Shanghai. 

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