IRL2910S MOSFET N-CH 100V 55A D2PAK
| Manufacturer | Infineon Technologies | |
|---|---|---|
| Series | HEXFET® | |
Packaging  | Tube | |
| Part Status | Not For New Designs | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 5V | |
| Vgs (Max) | ±16V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 29A, 10V | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
In the spring of 2018, Aspencore's "electronic engineering album", "electronic technology design" and "international electronic commerce" jointly hosted the 2018 China IC leaders summit in Shanghai.
