IRFP4668PBF N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC
Product Details
IRFP4668 MOSFET N-CH 200V 130A TO-247AC
Manufacturer
Infineon Technologies
Series
HEXFET®
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
241nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10720pF @ 50V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Rds On (Max) @ Id, Vgs
9.7 mOhm @ 81A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
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