IRFP4668 MOSFET N-CH 200V 130A TO-247AC
| Manufacturer | Infineon Technologies | |
|---|---|---|
| Series | HEXFET® | |
Packaging  | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 241nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 10720pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 520W (Tc) | |
| Rds On (Max) @ Id, Vgs | 9.7 mOhm @ 81A, 10V | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247AC | |
| Package / Case | TO-247-3 |
In the spring of 2018, Aspencore's "electronic engineering album", "electronic technology design" and "international electronic commerce" jointly hosted the 2018 China IC leaders summit in Shanghai.
