IRFP4668

IRFP4668

IRFP4668PBF N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC

Product Details


IRFP4668  MOSFET N-CH 200V 130A TO-247AC


ManufacturerInfineon Technologies
SeriesHEXFET®
Packaging ?Tube ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs241nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds10720pF @ 50V
FET Feature-
Power Dissipation (Max)520W (Tc)
Rds On (Max) @ Id, Vgs9.7 mOhm @ 81A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

In the spring of 2018, Aspencore's "electronic engineering album", "electronic technology design" and "international electronic commerce" jointly hosted the 2018 China IC leaders summit in Shanghai. 

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