IRFP4110PBF

IRFP4110PBF

IRFP4110PBF N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-247AC

Product Details


IRFP4110PBF  MOSFET N-CH 100V 120A TO-247AC


ManufacturerInfineon Technologies
SeriesHEXFET®
Packaging ?Bulk ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9620pF @ 50V
FET Feature-
Power Dissipation (Max)370W (Tc)
Rds On (Max) @ Id, Vgs4.5 mOhm @ 75A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

In the spring of 2018, Aspencore's "electronic engineering album", "electronic technology design" and "international electronic commerce" jointly hosted the 2018 China IC leaders summit in Shanghai. 

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