N-Channel 500V 6.6A (Tc) 60W (Tc) Through Hole TO-220-3
Product Details
IRFIB7N50A MOSFET N-CH 500V 6.6A TO220FP
Manufacturer
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1423pF @ 25V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Rds On (Max) @ Id, Vgs
520 mOhm @ 4A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
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