| Manufacturer | Vishay Siliconix | |
|---|---|---|
| Series | - | |
Packaging  | Tube | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1423pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 60W (Tc) | |
| Rds On (Max) @ Id, Vgs | 520 mOhm @ 4A, 10V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
Email: kathleen@buyicchip.com
Chinese and foreign enterprises in the field of intellectual property fair competition, the need for fair and just intellectual property protection. Strengthening intellectual property protection and building an open, transparent and predictable business environment is an important symbol of a country's international competitiveness. Determination of strict protection of intellectual property in our country, the Chinese and foreign alike size enterprises intellectual property rights protection, greatly enhance the confidence of global innovation enterprise - this will encourage Chinese enterprises to continue to create the high value of intellectual property rights
