|Technology||MOSFET (Metal Oxide)|
|Drain to Source Voltage (Vdss)||100V|
|Current - Continuous Drain (Id) @ 25°C||18A (Tc)|
|Drive Voltage (Max Rds On, Min Rds On)||10V|
|Vgs(th) (Max) @ Id||5V @ 250µA|
|Gate Charge (Qg) (Max) @ Vgs||23nC @ 10V|
|Input Capacitance (Ciss) (Max) @ Vds||550pF @ 50V|
|Power Dissipation (Max)||60W (Tc)|
|Rds On (Max) @ Id, Vgs||72.5 mOhm @ 13A, 10V|
|Operating Temperature||-55°C ~ 175°C (TJ)|
|Mounting Type||Through Hole|
|Supplier Device Package||TO-220AB|
|Package / Case||TO-220-3|
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IC CHIP CO., LIMITED
Demonstration of application of intelligent photovoltaic industrial park; Demonstration of intelligent photovoltaic architecture and urban application; Demonstration of intelligent photovoltaic transport applications; Demonstration of intelligent photovoltaic agriculture application; Demonstration of application of intelligent photovoltaic power station; We will carry out demonstration of the application of smart photovoltaic poverty alleviation. Fourth, we will improve the standard technology system, speed up the construction of public service platforms, and establish and improve the standard system of intelligent photovoltaic technology.