IRFB4212PBF

IRFB4212PBF

IRFB4212PBF N-Channel 100V 18A (Tc) 60W (Tc) Through Hole TO-220AB

Product Details


IRFB4212PBF MOSFET N-CH 100V 18A TO-220AB



  ManufacturerInfineon Technologies
  Series-
Packaging ?Tube ?
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 50V
FET Feature-
Power Dissipation (Max)60W (Tc)
Rds On (Max) @ Id, Vgs72.5 mOhm @ 13A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

 

 

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Company Information

IC CHIP CO., LIMITED
http://www.myicchip.com/
TEL: +86-755-88603571
MAIL: inquiry@theicchip.com

 Demonstration of application of intelligent photovoltaic industrial park; Demonstration of intelligent photovoltaic architecture and urban application; Demonstration of intelligent photovoltaic transport applications; Demonstration of intelligent photovoltaic agriculture application; Demonstration of application of intelligent photovoltaic power station; We will carry out demonstration of the application of smart photovoltaic poverty alleviation. Fourth, we will improve the standard technology system, speed up the construction of public service platforms, and establish and improve the standard system of intelligent photovoltaic technology.


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