IRF640PBF MOSFET N-CH 200V 18A TO-220AB
|Technology||MOSFET (Metal Oxide)|
|Drain to Source Voltage (Vdss)||200V|
|Current - Continuous Drain (Id) @ 25°C||18A (Tc)|
|Drive Voltage (Max Rds On, Min Rds On)||10V|
|Vgs(th) (Max) @ Id||4V @ 250µA|
|Gate Charge (Qg) (Max) @ Vgs||70nC @ 10V|
|Input Capacitance (Ciss) (Max) @ Vds||1300pF @ 25V|
|Power Dissipation (Max)||125W (Tc)|
|Rds On (Max) @ Id, Vgs||180 mOhm @ 11A, 10V|
|Operating Temperature||-55°C ~ 150°C (TJ)|
|Mounting Type||Through Hole|
|Supplier Device Package||TO-220AB|
|Package / Case||TO-220-3|
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IC CHIP CO., LIMITED
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