IRF640PBF MOSFET N-CH 200V 18A TO-220AB

IRF640PBF MOSFET N-CH 200V 18A TO-220AB

IRF640PBFN-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220AB

Product Details

IRF640PBF MOSFET N-CH 200V 18A TO-220AB

ManufacturerVishay Siliconix
Series-
Packaging ?Bulk ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Rds On (Max) @ Id, Vgs180 mOhm @ 11A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
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    Company Information

    IC CHIP CO., LIMITED
    http://www.myicchip.com/
    TEL: +86-755-88603571
    MAIL: inquiry@theicchip.com

     



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