IRF3710PBF

IRF3710PBF

N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-220AB

Product Details

IRF3710PBF MOSFET N-CH 100V 57A TO-220AB


ManufacturerInfineon Technologies
SeriesHEXFET®
Packaging ?Tube ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3130pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Rds On (Max) @ Id, Vgs23 mOhm @ 28A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3


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