IPP200N15N3GXKSA1

IPP200N15N3GXKSA1

IPP200N15N3GXKSA1 N-Channel 150V 50A (Tc) 150W (Tc) Through Hole PG-TO-220-3

Product Details


IPP200N15N3GXKSA1 MOSFET N-CH 150V 50A TO220-3


ManufacturerInfineon Technologies
SeriesOptiMOS™
Packaging ?Tube ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs(th) (Max) @ Id4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1820pF @ 75V
FET Feature-
Power Dissipation (Max)150W (Tc)
Rds On (Max) @ Id, Vgs20 mOhm @ 50A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO-220-3
Package / CaseTO-220-3


 

Company Information

IC CHIP CO., LIMITED
http://www.myicchip.com/
TEL: +86-755-88603571
MAIL: inquiry@theicchip.com

 

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