HUF75329D3ST

HUF75329D3ST

HUF75329D3ST N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA

Product Details

 

HUF75329D3ST MOSFET N-CH 55V 20A DPAK



ManufacturerON Semiconductor
SeriesUltraFET™
Packaging ?Tape & Reel (TR) ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1060pF @ 25V
FET Feature-
Power Dissipation (Max)128W (Tc)
Rds On (Max) @ Id, Vgs26 mOhm @ 20A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

In the spring of 2018, Aspencore's "electronic engineering album", "electronic technology design" and "international electronic commerce" jointly hosted the 2018 China IC leaders summit in Shanghai. 

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