HUF75329D3ST N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA
Product Details
HUF75329D3ST MOSFET N-CH 55V 20A DPAK
Manufacturer
ON Semiconductor
Series
UltraFET™
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65nC @ 20V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1060pF @ 25V
FET Feature
-
Power Dissipation (Max)
128W (Tc)
Rds On (Max) @ Id, Vgs
26 mOhm @ 20A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
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