HUF75329D3ST MOSFET N-CH 55V 20A DPAK
| Manufacturer | ON Semiconductor | |
|---|---|---|
| Series | UltraFET™ | |
Packaging  | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 20V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 128W (Tc) | |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 20A, 10V | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252AA | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
In the spring of 2018, Aspencore's "electronic engineering album", "electronic technology design" and "international electronic commerce" jointly hosted the 2018 China IC leaders summit in Shanghai.
