FQP8P10 MOSFET P-CH 100V 8A TO-220

FQP8P10 MOSFET P-CH 100V 8A TO-220

FQP8P10 P-Channel 100V 8A (Tc) 65W (Tc) Through Hole TO-220-3

Product Details

FQP8P10 MOSFET P-CH 100V 8A TO-220

ManufacturerON Semiconductor
Packaging ?Tube ?
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
FET Feature-
Power Dissipation (Max)65W (Tc)
Rds On (Max) @ Id, Vgs530 mOhm @ 4A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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    Company Information

    TEL: +86-755-88603571
    MAIL: inquiry@theicchip.com


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