FQP5N80

FQP5N80

FQP5N80 N-Channel 800V 4.8A (Tc) 140W (Tc) Through Hole TO-220-3

Product Details


FQP5N80 MOSFET N-CH 800V 4.8A TO-220


ManufacturerON Semiconductor
SeriesQFET®
Packaging ?Tube ?
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V

Email: kathleen@buyicchip.com

Current - Continuous Drain (Id) @ 25°C
4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1250pF @ 25V
FET Feature-
Power Dissipation (Max)140W (Tc)
Rds On (Max) @ Id, Vgs2.6 Ohm @ 2.4A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3


Email: kathleen@buyicchip.com


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