FQP10N20C MOSFET N-CH 200V 9.5A TO-220

FQP10N20C MOSFET N-CH 200V 9.5A TO-220

FQP10N20C N-Channel 200V 9.5A (Tc) 72W (Tc) Through Hole TO-220-3

Product Details

FQP10N20C MOSFET N-CH 200V 9.5A TO-220

ManufacturerON Semiconductor
Packaging ?Tube ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
FET Feature-
Power Dissipation (Max)72W (Tc)
Rds On (Max) @ Id, Vgs360 mOhm @ 4.75A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

  • Company Information

    TEL: +86-755-88603571
    MAIL: inquiry@theicchip.com

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