FQA55N25

FQA55N25

FQA55N25 N-Channel 250V 55A (Tc) 310W (Tc) Through Hole TO-3PN

Product Details

FQA55N25 MOSFET N-CH 250V 55A TO-3P

ManufacturerON Semiconductor
SeriesQFET®
Packaging ?Tube ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6250pF @ 25V
FET Feature-
Power Dissipation (Max)310W (Tc)
Rds On (Max) @ Id, Vgs40 mOhm @ 27.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

 

Company Information

IC CHIP CO., LIMITED
http://www.myicchip.com/
TEL: +86-755-88603571
MAIL: inquiry@theicchip.com

 

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