FDP61N20 N-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3

Product Details

FDP61N20  MOSFET N-CH 200V 61A TO-220

ManufacturerON Semiconductor
Packaging ?Tube ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3380pF @ 25V
FET Feature-
Power Dissipation (Max)417W (Tc)
Rds On (Max) @ Id, Vgs41 mOhm @ 30.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3


Company Information

TEL: +86-755-88603571
MAIL: inquiry@theicchip.com


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