FDP61N20

FDP61N20

FDP61N20 N-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3

Product Details

FDP61N20  MOSFET N-CH 200V 61A TO-220

ManufacturerON Semiconductor
SeriesUniFET™
Packaging ?Tube ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3380pF @ 25V
FET Feature-
Power Dissipation (Max)417W (Tc)
Rds On (Max) @ Id, Vgs41 mOhm @ 30.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

 

Company Information

IC CHIP CO., LIMITED
http://www.myicchip.com/
TEL: +86-755-88603571
MAIL: inquiry@theicchip.com

 

All kinds of industrial products to realize intelligence under the impetus of the Internet technology, intelligent industrial robot, intelligent agricultural machinery and so on, for example, only a small amount of manual work, can complete the Labour of complex operations. Unmanned automatic intelligent driving a car is iconic product, it combines integrates real-time perception, such as navigation, autopilot, network communication technology, through the map of high precision, advanced technology, image recognition technology, the intelligent decision and control on complete unmanned automated driving, to implement the intelligent of the service.

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