FDN352AP

FDN352AP

FDN352AP P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3

Product Details

FDN352AP MOSFET P-CH 30V 1.3A SSOT-3

ManufacturerON Semiconductor
SeriesPowerTrench®
Packaging ?Tape & Reel (TR) ?
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.9nC @ 4.5V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 15V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Rds On (Max) @ Id, Vgs180 mOhm @ 1.3A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT-3
Package / CaseTO-236-3, SC-59, SOT-23-3

 

 

Company Information

IC CHIP CO., LIMITED
http://www.myicchip.com/
TEL: +86-755-88603571
MAIL: inquiry@theicchip.com

 

 The future on the one hand, all kinds of social networks and throughout all the terminal sensor will generate huge amounts of raw data, on the other hand the development of storage technology and cloud data processing platform, greatly reduce the cost of data storage and processing, the further development of cloud computing will be massive amounts of data mining, operation, analysis became a reality. Various industry ", "social data, traffic data, the data become the precious wealth, France telecom - Orange polish telecom corp

Inquiry