FDB3632

FDB3632

N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK

Product Details

FDB3632 MOSFET N-CH 100V 80A D2PAK


ManufacturerON Semiconductor
SeriesPowerTrench®
Packaging ?Tape & Reel (TR) ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)310W (Tc)
Rds On (Max) @ Id, Vgs9 mOhm @ 80A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Email: jody@theicchip.com



   

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