FCA35N60

FCA35N60

N-Channel 600V 35A (Tc) 312.5W (Tc) Through Hole TO-3PN

Product Details

FCA35N60  MOSFET N-CH 600V 35A TO-3PN

ManufacturerON Semiconductor
SeriesSuperFET™
Packaging ?Tube ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs181nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6640pF @ 25V
FET Feature-
Power Dissipation (Max)312.5W (Tc)
Rds On (Max) @ Id, Vgs98 mOhm @ 17.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3


 

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