AOTF20S60L

AOTF20S60L

AOTF20S60L N-Channel 600V 20A (Tc) 37.8W (Tc) Through Hole TO-220-3F

Product Details


AOTF20S60L MOSFET N-CH 600V 20A TO220F


ManufacturerAlpha & Omega Semiconductor Inc.
SeriesaMOS™
Packaging ?Tube ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1038pF @ 100V
FET Feature-
Power Dissipation (Max)37.8W (Tc)
Rds On (Max) @ Id, Vgs199 mOhm @ 10A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3F
Package / CaseTO-220-3 Full Pack


Company Information

IC CHIP CO., LIMITED
http://www.myicchip.com/
TEL: +86-755-88603571
MAIL: inquiry@theicchip.com

 From the infrastructure sector, in addition to the enhanced broadband, it may take three to five years for the millimeter-wave field to be in China. At present the mainstream of the global field of millimeter wave go the top is the United States, the United States this year is the millimeter wave of commercial, but this scenario we call FWA fixed wireless access equipment, such a scenario is not in the traditional sense of mobile phone application scenario, so you can't see in the United States have any 5 g mobile system based on millimeter wave the phone or mobile data class device.

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