2N7002T

2N7002T

2N7002T N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-523F

Product Details

2N7002T MOSFET N-CH 60V 115MA SOT-523F

Packaging ?Tape & Reel (TR) ?
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Rds On (Max) @ Id, Vgs7.5 Ohm @ 50mA, 5V
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-523F
Package / CaseSC-89, SOT-490


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    Company Information

    IC CHIP CO., LIMITED
    http://www.myicchip.com/
    TEL: +86-755-88603571
    MAIL: inquiry@theicchip.com

     

The Chinese academy of sciences has signed a cooperation agreement with tianjin to achieve strategic cooperation in the field of intelligent technology. The Chinese academy of engineering has helped us to establish the artificial intelligence industry technology research institute. China association of science and technology attaches great importance to "attracting talents", and has actively cooperated with us from three aspects such as think tank, society and science popularization. These caring guidance and support have further strengthened our resolve and confidence to host the world smart congress and boost the development of the smart technology industry

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